PCN0514
Abstract: epcs16n EPCS64N EPCS1SI8N marking EPCS4SI8N altera epcs16n 7B223 EPCS64SI16N marking code V5 z213x
Text: PROCESS CHANGE NOTIFICATION PCN0514 REV 2 MANUFACTURING CHANGES ON EPCS FAMILY Change Description: This is a revision to PCN0514, which was released in September 2005. The serial configuration device family will undergo manufacturing changes relating to process geometry and adding fabrication and assembly sites, as
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PCN0514
PCN0514,
EPCS16SI16N
EPCS64SI16N
PCN0514
EPCS16SI16N
EPCS64SI16N.
epcs16n
EPCS64N
EPCS1SI8N marking
EPCS4SI8N
altera epcs16n
7B223
EPCS64SI16N
marking code V5
z213x
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0.18-um CMOS technology characteristics
Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
Text: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM
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5136B-05/06/1K
0.18-um CMOS technology characteristics
atmel 048
MICRON RESISTOR Mos
NMOS transistor 0.18 um CMOS
atmel 018
0.18-um CMOS technology
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71V3558
Abstract: 71V2557
Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR0105-01 DATE: 5/14/01 Product Affected: ZBT Product Family - Refer to attached list of part #'s. Manufacturing Location Affected: N/A
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SR0105-01
IDT71V2559
133MHz
IDT71V3556
IDT71V2556
IDT71V3558
IDT71V2558
71V3558
71V2557
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Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM
Abstract: TPC2A Alcatel-Lucent
Text: Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM A.Y.-K. Chen Presented is the performance of a highly integrated RF single-pole double-throw SPDT switch fabricated in a 0.18 µm bulk CMOS process and housed in a low-cost laminated multi-chip module (MCML) package. A switch controller is also implemented and consumes
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0.18 um CMOS Spiral Inductor technology
Abstract: TSMC+rf+cmos+0.18+um
Text: Standard Features • • • • • • • 1.8V CMOS Transistors High Value Poly Resistors N+ & P+ S/D Resistors Low Value Poly Resistor Standard Poly Implant Resistor Multilevel Metallization 1P/4M Non-epi 200 mm Wafer Optional Features • • • •
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12um2
AT589RF
5133B
0.18 um CMOS Spiral Inductor technology
TSMC+rf+cmos+0.18+um
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"RGB to YCbCr"
Abstract: RGB to YCbCr converter ADCC-3000 cmos IMAGE SENSOR xenon RGB line sensor array CCIR-656 "1.3 megapixel" cmos image sensor
Text: ADCC-3000 Landscape 1.3 Megapixel 1/4” CMOS Image Sensor Product Brief Description Features The Avago ADCC-3000 is an advanced, low power 1.3 megapixel SXGA image sensor with an integrated image processor. The CMOS image sensor and image processing pipeline delivers images data formats ready
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ADCC-3000
ADCC-3000
10-bit
24-bit
1280H
0000-0000EN
"RGB to YCbCr"
RGB to YCbCr converter
cmos IMAGE SENSOR xenon
RGB line sensor array
CCIR-656
"1.3 megapixel"
cmos image sensor
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 8/21/00 PCN #: SR0008-03 DATE: Product Affected: 71V416S/L, 71V424S/L, 71V428S/L Manufacturing Location Affected: Date Effective: 11/20/00 Contact:
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SR0008-03
71V416S/L,
71V424S/L,
71V428S/L
FRC-1509-01
QCA-1795
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ARM1136J-S
Abstract: ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro
Text: 2007-3 PRODUCT GUIDE CMOS ASICs To ensure competitiveness in the marketplace, you will need to produce more sophisticated, more technology-intensive and higher value-added products, using a process of technological innovation and systematic marketing. Toshiba's application-specific
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BCE0032A
S-167
BCE0032B
ARM1136J-S
ELDEC
TOSHIBA TC160
ARM1136J
TOSHIBA cmos image 1995
tc190c
CMOS GATE ARRAYs toshiba
TC190G
TC280
Celaro
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hv2300
Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
Text: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom
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71016s
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR0011-04 DATE: Product Affected: 71016S, 71124S, 71128S Manufacturing Location Affected: N/A Date Effective: Contact: Title: Phone #: Fax #:
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SR0011-04
71016S,
71124S,
71128S
71016s
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servo track
Abstract: hdd dsp SD5210 176pin
Text: SD5210 Integrated Processor/DSP HDD Platform Device • FEATURES - - • - - - • Clock control - Writeable control store WCS -based sequencer included Supports headerless operation 8-bit Non-Return-to-Zero (NRZ) interface supporting data rates up to 450 Mbit/s
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SD5210
T320C2700B0
servo track
hdd dsp
SD5210
176pin
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XH018
Abstract: hall sensor 41 hall effect flow sensor 0.18-um CMOS technology characteristics X-Fab primitive sensor signal hall sensor CMOS Process Family micron cmos sensor connection 3 terminal hall effect sensor
Text: 0.18 µm CMOS Process Family XH018 - Hall Sensor MIXED-SIGNAL FOUNDRY EXPERTS Embedded HALL Effect Sensor IP in 0.18 Micron Technology Description The XH018 Hall Sensor is X-FAB’s specialized readyto-use Hall effect sensor IP, based on the 0.18 m HV CMOS Processes.
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XH018
hall sensor 41
hall effect flow sensor
0.18-um CMOS technology characteristics
X-Fab
primitive sensor
signal hall sensor
CMOS Process Family
micron cmos sensor connection
3 terminal hall effect sensor
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blood pressure circuit schematic
Abstract: MT2131 mt494 blood glucose electronics circuit EP1C6Q240C8 U12M "7 Segment Displays" 4 units 7-segment LED display module 8088 memory interface SRAM glucose
Text: FPGA-Based Clinical Diagnostic System using Pipelined Architectures in the Nios II Processor Third Prize FPGA-Based Clinical Diagnostic System using Pipelined Architectures in the Nios II Soft-Core Processor Institution: Jadavpur University, Calcutta Participants:
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CMOS
Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.
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MAX77100
Abstract: IC74 IC-74
Text: SANYO SEMICONDUCTOR CORP 53E TW OTb T> 0010S31 037 « T S A J r- H4>~ 0 7 — 0 7 MLC74HC76M No.3628 f CMOS High-Speed Standard Logic Dual J-K Flip-Flop with Reset and Set F e a tu re s • The MLC74HC76M consists of 2 identical J-K type flip-flops. • Uses CMOS silicon gate process technology to achieve operating speeds sim ilar to LS-TTL 74LS76
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0010S31
MLC74HC76M
MLC74HC76M
74LS76)
54LS/74LS
MLC74HC
MAX77100
IC74
IC-74
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philips tea 1090
Abstract: PAL 007 B pal 002 PZ3064 PZ3064-10A44 PZ3064-10BC PZ3064-12A44 PZ3064-12BC PZ3064I12A44 PZ3064I12BC
Text: Philips Sem iconductors Product specification 64 macrocell CPLD PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ3064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips
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PZ3064
50MHz
OT382-1
MO-108CC-1
philips tea 1090
PAL 007 B
pal 002
PZ3064
PZ3064-10A44
PZ3064-10BC
PZ3064-12A44
PZ3064-12BC
PZ3064I12A44
PZ3064I12BC
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pal 012 a
Abstract: PAL 012
Text: Philips Sem iconductors Product specification 64 macrocell CPLD PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ3064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips
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PZ3064
MO-108CC-1
T382-1
pal 012 a
PAL 012
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors Product specification 64 macrocell CPLD PZ5064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ5064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips
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PZ5064
MO-108CC-1
T382-1
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philips tea 1090
Abstract: mc15 PAL 007 B PAL 007 E pal 002 PZ3064 PZ5064-10A44 PZ5064-10BC PZ5064-7A44 PZ5064-7BC
Text: Philips Sem iconductors Product specification 64 macrocell CPLD PZ5064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ5064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips
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PZ5064
50MHz
OT382-1
MO-108CC-1
philips tea 1090
mc15
PAL 007 B
PAL 007 E
pal 002
PZ3064
PZ5064-10A44
PZ5064-10BC
PZ5064-7A44
PZ5064-7BC
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PAL 0007
Abstract: PAL 007 B pal 002 PAL 007 E PZ3064 PZ3064-10A44 PZ3064-10BC PZ3064-12A44 PZ3064-12BC PZ3064I12A44
Text: Philips Sem iconductors Prelim inary specification 64 macrocell CPLD PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CMOS design and process technologies The PZ3064 CPLD Complex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips
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PZ3064
50MHz
OT382-1
MO-108CC-1
PAL 0007
PAL 007 B
pal 002
PAL 007 E
PZ3064
PZ3064-10A44
PZ3064-10BC
PZ3064-12A44
PZ3064-12BC
PZ3064I12A44
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philips tea 1090
Abstract: PAL 007 B pal 002 PZ3064 PZ3064-10A44 PZ3064-10BC PZ3064-12A44 PZ3064-12BC PZ3064I12A44 PZ3064I12BC
Text: Philips Sem iconductors Prelim inary specification 64 macrocell CPLD PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CMOS design and process technologies The PZ3064 CPLD Complex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips
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PZ3064
50MHz
OT382-1
MO-108CC-1
philips tea 1090
PAL 007 B
pal 002
PZ3064
PZ3064-10A44
PZ3064-10BC
PZ3064-12A44
PZ3064-12BC
PZ3064I12A44
PZ3064I12BC
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MIC427AJ
Abstract: tl494 "analog devices" tl494 dc to ac ic428
Text: MIC426/427/428 Dual 1.5A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC426/427/428 are dual high speed drivers. A TTL7 CMOS input voltage level is translated into an output voltage level swing equalling the supply. The DMOS output will be
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MIC426/427/428
MIC426/427/428
1000pF
MIC427AJ
tl494 "analog devices"
tl494 dc to ac
ic428
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MLD57
Abstract: MLD571 gift card
Text: CRO MLD571 ONE Lamp / LED Driver D ISCRIPTIO N The M LD57 ] are low power CMOS LSI in TO-92 package, designed for the application o f lamp and LED flash driver It can be operated without any external components. Therefore it is very suitable for such applications as flash badge, gift card, flash ear-ring and other flash products.
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MLD57
MLD571
MLD571
gift card
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27C020
Abstract: 27C040 27C080 NM27P512 NSC800
Text: NM 27P512 524,288-B it 64K x 8 P rocessor O riented CM O S EPROM General Description Features The NM27P512 is a 512K Processor Oriented EPROM con figured as 64k x 8 . It’s designed to simplify microprocessor interfacing while remaining compatible with standard
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NM27P512
288-Bit
NM27P512
a7001
27C020
27C040
27C080
NSC800
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