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    0.18 UM CMOS PROCESS Search Results

    0.18 UM CMOS PROCESS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    0.18 UM CMOS PROCESS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PCN0514

    Abstract: epcs16n EPCS64N EPCS1SI8N marking EPCS4SI8N altera epcs16n 7B223 EPCS64SI16N marking code V5 z213x
    Text: PROCESS CHANGE NOTIFICATION PCN0514 REV 2 MANUFACTURING CHANGES ON EPCS FAMILY Change Description: This is a revision to PCN0514, which was released in September 2005. The serial configuration device family will undergo manufacturing changes relating to process geometry and adding fabrication and assembly sites, as


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    PDF PCN0514 PCN0514, EPCS16SI16N EPCS64SI16N PCN0514 EPCS16SI16N EPCS64SI16N. epcs16n EPCS64N EPCS1SI8N marking EPCS4SI8N altera epcs16n 7B223 EPCS64SI16N marking code V5 z213x

    0.18-um CMOS technology characteristics

    Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
    Text: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM


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    PDF 5136B-05/06/1K 0.18-um CMOS technology characteristics atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology

    71V3558

    Abstract: 71V2557
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR0105-01 DATE: 5/14/01 Product Affected: ZBT Product Family - Refer to attached list of part #'s. Manufacturing Location Affected: N/A


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    PDF SR0105-01 IDT71V2559 133MHz IDT71V3556 IDT71V2556 IDT71V3558 IDT71V2558 71V3558 71V2557

    Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM

    Abstract: TPC2A Alcatel-Lucent
    Text: Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM A.Y.-K. Chen Presented is the performance of a highly integrated RF single-pole double-throw SPDT switch fabricated in a 0.18 µm bulk CMOS process and housed in a low-cost laminated multi-chip module (MCML) package. A switch controller is also implemented and consumes


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    0.18 um CMOS Spiral Inductor technology

    Abstract: TSMC+rf+cmos+0.18+um
    Text: Standard Features • • • • • • • 1.8V CMOS Transistors High Value Poly Resistors N+ & P+ S/D Resistors Low Value Poly Resistor Standard Poly Implant Resistor Multilevel Metallization 1P/4M Non-epi 200 mm Wafer Optional Features • • • •


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    PDF 12um2 AT589RF 5133B 0.18 um CMOS Spiral Inductor technology TSMC+rf+cmos+0.18+um

    "RGB to YCbCr"

    Abstract: RGB to YCbCr converter ADCC-3000 cmos IMAGE SENSOR xenon RGB line sensor array CCIR-656 "1.3 megapixel" cmos image sensor
    Text: ADCC-3000 Landscape 1.3 Megapixel 1/4” CMOS Image Sensor Product Brief Description Features The Avago ADCC-3000 is an advanced, low power 1.3 megapixel SXGA image sensor with an integrated image processor. The CMOS image sensor and image processing pipeline delivers images data formats ready


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    PDF ADCC-3000 ADCC-3000 10-bit 24-bit 1280H 0000-0000EN "RGB to YCbCr" RGB to YCbCr converter cmos IMAGE SENSOR xenon RGB line sensor array CCIR-656 "1.3 megapixel" cmos image sensor

    Untitled

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 8/21/00 PCN #: SR0008-03 DATE: Product Affected: 71V416S/L, 71V424S/L, 71V428S/L Manufacturing Location Affected: Date Effective: 11/20/00 Contact:


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    PDF SR0008-03 71V416S/L, 71V424S/L, 71V428S/L FRC-1509-01 QCA-1795

    ARM1136J-S

    Abstract: ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro
    Text: 2007-3 PRODUCT GUIDE CMOS ASICs To ensure competitiveness in the marketplace, you will need to produce more sophisticated, more technology-intensive and higher value-added products, using a process of technological innovation and systematic marketing. Toshiba's application-specific


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    PDF BCE0032A S-167 BCE0032B ARM1136J-S ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro

    hv2300

    Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
    Text: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom


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    71016s

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR0011-04 DATE: Product Affected: 71016S, 71124S, 71128S Manufacturing Location Affected: N/A Date Effective: Contact: Title: Phone #: Fax #:


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    PDF SR0011-04 71016S, 71124S, 71128S 71016s

    servo track

    Abstract: hdd dsp SD5210 176pin
    Text: SD5210 Integrated Processor/DSP HDD Platform Device • FEATURES - - • - - - • Clock control - Writeable control store WCS -based sequencer included Supports headerless operation 8-bit Non-Return-to-Zero (NRZ) interface supporting data rates up to 450 Mbit/s


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    PDF SD5210 T320C2700B0 servo track hdd dsp SD5210 176pin

    XH018

    Abstract: hall sensor 41 hall effect flow sensor 0.18-um CMOS technology characteristics X-Fab primitive sensor signal hall sensor CMOS Process Family micron cmos sensor connection 3 terminal hall effect sensor
    Text: 0.18 µm CMOS Process Family XH018 - Hall Sensor MIXED-SIGNAL FOUNDRY EXPERTS Embedded HALL Effect Sensor IP in 0.18 Micron Technology Description The XH018 Hall Sensor is X-FAB’s specialized readyto-use Hall effect sensor IP, based on the 0.18 m HV CMOS Processes.


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    PDF XH018 hall sensor 41 hall effect flow sensor 0.18-um CMOS technology characteristics X-Fab primitive sensor signal hall sensor CMOS Process Family micron cmos sensor connection 3 terminal hall effect sensor

    blood pressure circuit schematic

    Abstract: MT2131 mt494 blood glucose electronics circuit EP1C6Q240C8 U12M "7 Segment Displays" 4 units 7-segment LED display module 8088 memory interface SRAM glucose
    Text: FPGA-Based Clinical Diagnostic System using Pipelined Architectures in the Nios II Processor Third Prize FPGA-Based Clinical Diagnostic System using Pipelined Architectures in the Nios II Soft-Core Processor Institution: Jadavpur University, Calcutta Participants:


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    CMOS

    Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
    Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.


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    MAX77100

    Abstract: IC74 IC-74
    Text: SANYO SEMICONDUCTOR CORP 53E TW OTb T> 0010S31 037 « T S A J r- H4>~ 0 7 — 0 7 MLC74HC76M No.3628 f CMOS High-Speed Standard Logic Dual J-K Flip-Flop with Reset and Set F e a tu re s • The MLC74HC76M consists of 2 identical J-K type flip-flops. • Uses CMOS silicon gate process technology to achieve operating speeds sim ilar to LS-TTL 74LS76


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    PDF 0010S31 MLC74HC76M MLC74HC76M 74LS76) 54LS/74LS MLC74HC MAX77100 IC74 IC-74

    philips tea 1090

    Abstract: PAL 007 B pal 002 PZ3064 PZ3064-10A44 PZ3064-10BC PZ3064-12A44 PZ3064-12BC PZ3064I12A44 PZ3064I12BC
    Text: Philips Sem iconductors Product specification 64 macrocell CPLD PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ3064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips


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    PDF PZ3064 50MHz OT382-1 MO-108CC-1 philips tea 1090 PAL 007 B pal 002 PZ3064 PZ3064-10A44 PZ3064-10BC PZ3064-12A44 PZ3064-12BC PZ3064I12A44 PZ3064I12BC

    pal 012 a

    Abstract: PAL 012
    Text: Philips Sem iconductors Product specification 64 macrocell CPLD PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ3064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips


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    PDF PZ3064 MO-108CC-1 T382-1 pal 012 a PAL 012

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors Product specification 64 macrocell CPLD PZ5064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ5064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips


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    PDF PZ5064 MO-108CC-1 T382-1

    philips tea 1090

    Abstract: mc15 PAL 007 B PAL 007 E pal 002 PZ3064 PZ5064-10A44 PZ5064-10BC PZ5064-7A44 PZ5064-7BC
    Text: Philips Sem iconductors Product specification 64 macrocell CPLD PZ5064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ5064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips


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    PDF PZ5064 50MHz OT382-1 MO-108CC-1 philips tea 1090 mc15 PAL 007 B PAL 007 E pal 002 PZ3064 PZ5064-10A44 PZ5064-10BC PZ5064-7A44 PZ5064-7BC

    PAL 0007

    Abstract: PAL 007 B pal 002 PAL 007 E PZ3064 PZ3064-10A44 PZ3064-10BC PZ3064-12A44 PZ3064-12BC PZ3064I12A44
    Text: Philips Sem iconductors Prelim inary specification 64 macrocell CPLD PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CMOS design and process technologies The PZ3064 CPLD Complex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips


    OCR Scan
    PDF PZ3064 50MHz OT382-1 MO-108CC-1 PAL 0007 PAL 007 B pal 002 PAL 007 E PZ3064 PZ3064-10A44 PZ3064-10BC PZ3064-12A44 PZ3064-12BC PZ3064I12A44

    philips tea 1090

    Abstract: PAL 007 B pal 002 PZ3064 PZ3064-10A44 PZ3064-10BC PZ3064-12A44 PZ3064-12BC PZ3064I12A44 PZ3064I12BC
    Text: Philips Sem iconductors Prelim inary specification 64 macrocell CPLD PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CMOS design and process technologies The PZ3064 CPLD Complex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips


    OCR Scan
    PDF PZ3064 50MHz OT382-1 MO-108CC-1 philips tea 1090 PAL 007 B pal 002 PZ3064 PZ3064-10A44 PZ3064-10BC PZ3064-12A44 PZ3064-12BC PZ3064I12A44 PZ3064I12BC

    MIC427AJ

    Abstract: tl494 "analog devices" tl494 dc to ac ic428
    Text: MIC426/427/428 Dual 1.5A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC426/427/428 are dual high speed drivers. A TTL7 CMOS input voltage level is translated into an output voltage level swing equalling the supply. The DMOS output will be


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    PDF MIC426/427/428 MIC426/427/428 1000pF MIC427AJ tl494 "analog devices" tl494 dc to ac ic428

    MLD57

    Abstract: MLD571 gift card
    Text: CRO MLD571 ONE Lamp / LED Driver D ISCRIPTIO N The M LD57 ] are low power CMOS LSI in TO-92 package, designed for the application o f lamp and LED flash driver It can be operated without any external components. Therefore it is very suitable for such applications as flash badge, gift card, flash ear-ring and other flash products.


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    PDF MLD57 MLD571 MLD571 gift card

    27C020

    Abstract: 27C040 27C080 NM27P512 NSC800
    Text: NM 27P512 524,288-B it 64K x 8 P rocessor O riented CM O S EPROM General Description Features The NM27P512 is a 512K Processor Oriented EPROM con­ figured as 64k x 8 . It’s designed to simplify microprocessor interfacing while remaining compatible with standard


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    PDF NM27P512 288-Bit NM27P512 a7001 27C020 27C040 27C080 NSC800