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    0.1 J100 Search Results

    0.1 J100 Result Highlights (5)

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    SF-NDAAFJ100G-002M Amphenol Cables on Demand Amphenol SF-NDAAFJ100G-002M 2m (6.6') 100GbE QSFP28 Cable - Amphenol 100-Gigabit Ethernet Passive Copper QSFP Cable (SFF-8665 802.3bj) - QSFP28 to QSFP28 (26-AWG Low-Loss) Datasheet
    SF-NDAQGJ100G-002M Amphenol Cables on Demand Amphenol SF-NDAQGJ100G-002M 2m QSFP28 to 4 x SFP28 Splitter Cable (26 AWG Passive Copper) - 1 x QSFP28 (100GbE) to 4 x SFP28 (25GbE) Connectors (6.6 ft) Datasheet
    SF-NDAAFJ100G-003M Amphenol Cables on Demand Amphenol SF-NDAAFJ100G-003M 3m (9.8') 100GbE QSFP28 Cable - Amphenol 100-Gigabit Ethernet Passive Copper QSFP Cable (SFF-8665 802.3bj) - QSFP28 to QSFP28 (26 AWG) Datasheet
    SF-NDAAFJ100G-005M Amphenol Cables on Demand Amphenol SF-NDAAFJ100G-005M 5m (16.4') 100GbE QSFP28 Cable - Amphenol 100-Gigabit Ethernet Passive Copper QSFP Cable (SFF-8665 802.3bj) - QSFP28 to QSFP28 (26 AWG) Datasheet
    SF-NDAQGJ100G-003M Amphenol Cables on Demand Amphenol SF-NDAQGJ100G-003M 3m QSFP28 to 4 x SFP28 Splitter Cable (26 AWG Passive Copper) - 1 x QSFP28 (100GbE) to 4 x SFP28 (25GbE) Connectors (9.8 ft) Datasheet
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    0.1 J100 Price and Stock

    Panasonic Electronic Components ERJ-U01J100C

    RES 10 OHM 5% 1/20W 0201
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    DigiKey ERJ-U01J100C Digi-Reel 118,218 1
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    ERJ-U01J100C Reel 105,000 15,000
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    Cal-Chip Electronics GMC10CG101J100NTD

    CAP0603 COG 100PF 5% 100V
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    Vishay Beyschlag 1C10C0G101J100B

    CAP CER 100PF 100V C0G/NP0 RAD
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    DigiKey 1C10C0G101J100B Bulk 7,524 1
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    TE Connectivity RR01J100RTB

    RES 100 OHM 5% 1W AXIAL
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    DigiKey RR01J100RTB Cut Tape 7,258 1
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    AEM Inc HRB0805S101J1.00FT

    FERRITE BEAD, CHIP, 0805, 100 OH
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    DigiKey HRB0805S101J1.00FT Digi-Reel 6 1
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    HRB0805S101J1.00FT Reel 6 6
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    HRB0805S101J1.00FT Cut Tape 6 1
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    Find more 0.1 J100 price and stock on Findchips.com

    0.1 J100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KF 13002 F

    Abstract: TRANSISTOR 9642 kf 13002 rbm 0505 2SC5787 NE894M13 NE894M13-A NE894M13-T3-A S21E Q1 k 1821
    Text: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 0.1 3 0.2+0.1 ñ0.05 0.3 0.1 0.125+0.1 ñ0.05 NEC's NE894M13 transistor is designed for oscillator applications above 3 GHz. The NE894M13 features low voltage, low


    Original     		NE894M13 NE894M13 KF 13002 F TRANSISTOR 9642 kf 13002 rbm 0505 2SC5787 NE894M13-A NE894M13-T3-A S21E Q1 k 1821 PDF

    pt 7313

    Abstract: 5252 F 1105 transistor 2SC5618 NE687M13 S21E NF 028 transistor pt 6009 5252 F 1105
    Text: NEC's NPN SILICON TRANSISTOR NE687M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 1 0.3 3 0.1 0.125+0.1 ñ0.05 0.1 0.5±0.05 NEC's NE687M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited


    Original     		NE687M13 NE687M13 pt 7313 5252 F 1105 transistor 2SC5618 S21E NF 028 transistor pt 6009 5252 F 1105 PDF

    5252 F 1105 transistor

    Abstract: pt 7313 5252 F 1105 ic 7313 2SC5618 IB 6405 nec 4814 transistor pt 6009 of IC 9290 NE687M13
    Text: NPN SILICON TRANSISTOR NE687M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 1 0.3 3 0.1 0.125+0.1 ñ0.05 0.1 0.5±0.05 The NE687M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for


    Original     		NE687M13 NE687M13 5252 F 1105 transistor pt 7313 5252 F 1105 ic 7313 2SC5618 IB 6405 nec 4814 transistor pt 6009 of IC 9290 PDF

    pt 7313

    Abstract: 5252 F 1105 transistor 2SC5618 NE687M13 NE687M13-A NE687M13-T3-A S21E GA82 5252 F 1105 ic 7313
    Text: NEC's NPN SILICON TRANSISTOR NE687M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 1 0.3 3 0.1 0.125+0.1 ñ0.05 0.1 0.5±0.05 NEC's NE687M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited


    Original     		NE687M13 NE687M13 pt 7313 5252 F 1105 transistor 2SC5618 NE687M13-A NE687M13-T3-A S21E GA82 5252 F 1105 ic 7313 PDF

    LB 11899

    Abstract: NE851M13-T3-A of IC 7476 in file bf166 IC 2262 AF 2SC5801 NE851M13 S21E NEC semiconductor 9135 Features of IC 7476
    Text: NEC's NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 LOW PUSHING FACTOR 0.35 • 0.7 LOW PHASE NOISE 1.0+0.1 ñ0.05 IDEAL FOR ≤ 3 GHz OSCILLATORS • 0.7±0.05


    Original     		NE851M13 NE851M13 LB 11899 NE851M13-T3-A of IC 7476 in file bf166 IC 2262 AF 2SC5801 S21E NEC semiconductor 9135 Features of IC 7476 PDF

    ic 7738

    Abstract: 2SC5801 NE851M13 NE851M13-T3 S21E kf 203 transistor NEC 2501 LE 240
    Text: NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 0.35 LOW PUSHING FACTOR 0.7 • 1.0+0.1 ñ0.05 IDEAL FOR ≤ 3 GHz OSCILLATORS LOW PHASE NOISE 0.7±0.05 E7


    Original     		NE851M13 NE851M13 ic 7738 2SC5801 NE851M13-T3 S21E kf 203 transistor NEC 2501 LE 240 PDF

    IC 2262 AF

    Abstract: LB 11899 2SC5801 applications IC 7476 160 e7 901 704 16 08 55 MJE 280 power transistor transistor BF 697 S21E NE851M13
    Text: NEC's NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 0.35 LOW PUSHING FACTOR 0.7 • 1.0+0.1 ñ0.05 IDEAL FOR ≤ 3 GHz OSCILLATORS LOW PHASE NOISE 0.7±0.05


    Original     		NE851M13 NE851M13 4e-12 65e-12 IC 2262 AF LB 11899 2SC5801 applications IC 7476 160 e7 901 704 16 08 55 MJE 280 power transistor transistor BF 697 S21E PDF

    kf 13002

    Abstract: 2SC5787 TRANSISTOR 9642 NE894M13 NE894M13-A NE894M13-T3-A S21E rf npn power transistor c 10-12 ghz s-1125
    Text: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M13 LOW Cre • UHSO 25 GHz PROCESS 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 • 0.35 LOW NOISE, HIGH GAIN 1.0+0.1 ñ0.05 IDEAL FOR > 3 GHz OSCILLATORS • 0.7±0.05


    Original     		NE894M13 NE894M13 kf 13002 2SC5787 TRANSISTOR 9642 NE894M13-A NE894M13-T3-A S21E rf npn power transistor c 10-12 ghz s-1125 PDF

    BF 6591

    Abstract: nec 7915 2SC5617 transistor on 4409 NEC 9714 RF NPN POWER TRANSISTOR C 10-12 GHZ NE685 NE685M13 NE685M13-T3 S21E
    Text: NEC's NPN SILICON TRANSISTOR NE685M13 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz 0.35 • 1.0+0.1 ñ0.05 HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz 0.7±0.05


    Original     		NE685M13 NE685M13 BF 6591 nec 7915 2SC5617 transistor on 4409 NEC 9714 RF NPN POWER TRANSISTOR C 10-12 GHZ NE685 NE685M13-T3 S21E PDF

    kf 13002

    Abstract: TRANSISTOR 9642 mje 3055 KF 13002 F 2SC5787 NE894M13 S21E transistor BR 13002
    Text: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M13 LOW Cre • UHSO 25 GHz PROCESS 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 • 0.35 LOW NOISE, HIGH GAIN 1.0+0.1 ñ0.05 IDEAL FOR > 3 GHz OSCILLATORS • 0.7±0.05


    Original     		NE894M13 NE894M13 kf 13002 TRANSISTOR 9642 mje 3055 KF 13002 F 2SC5787 S21E transistor BR 13002 PDF

    BF 6591

    Abstract: transistor on 4409 2SC5617 NE685 NE685M13 NE685M13-T3-A S21E NEC JAPAN 7915 nec 7915 6004 0215
    Text: NEC's NPN SILICON TRANSISTOR NE685M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 0.35 LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz 0.35 • 1.0+0.1 ñ0.05 HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz


    Original     		NE685M13 NE685M13 BF 6591 transistor on 4409 2SC5617 NE685 NE685M13-T3-A S21E NEC JAPAN 7915 nec 7915 6004 0215 PDF

    PS 229

    Abstract: 2SC5277 ITR08213 ITR08214 ITR08215 ITR08216 ITR08217
    Text: Ordering number:ENN5187 NPN Epitaxial Planar Silicon Transistor 2SC5277 UHF to S Band Low-Noise Amplifier, OSC Applications Package Dimensions unit:mm 2106A [2SC5277] 0.75 0.6 0.3 0.4 3 0 to 0.1 0.8 1.6 2 1 0.2 0.1 0.5 0.5 0.1max • Low noise : NF=0.9dB typ f=1GHz .


    Original     		ENN5187 2SC5277 2SC5277] S21e2 11GHz PS 229 2SC5277 ITR08213 ITR08214 ITR08215 ITR08216 ITR08217 PDF

    equivalent ZO 607

    Abstract: j200 transistor 2SC5226 2SC5245 FH202 TS4162
    Text: Ordering number:ENN6220 NPN Epitaxial Planar Silicon Composite Transistor FH202 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6


    Original     		ENN6220 FH202 FH202] 2SC5226) TS4162) FH202 2SC5245 TS4162, equivalent ZO 607 j200 transistor 2SC5226 TS4162 PDF

    MARKING 201

    Abstract: j200 transistor SANYO SS 1001 2SC4867 2SC4871 FH201
    Text: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 VCO OSC Circuit Applications Package Dimensions unit:mm 2149 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Base1 SANYO : MCP6


    Original     		ENN6117 FH201 FH201] 2SC4871) 2SC4867) FH201 2SC4871 2SC4867, MARKING 201 j200 transistor SANYO SS 1001 2SC4867 PDF

    equivalent ZO 607

    Abstract: j200 transistor 2SC5226 2SC5245 FH202 TS4162
    Text: Ordering number:ENN6220 NPN Epitaxial Planar Silicon Composite Transistor FH202 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6


    Original     		ENN6220 FH202 FH202] 2SC5226) TS4162) FH202 2SC5245 TS4162, equivalent ZO 607 j200 transistor 2SC5226 TS4162 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3W, L & S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5°C/W Functional Characteristics 0.2 ± 0.1


    Original     		NE6500379A IMT-2000, IMT2000, 24-Hour PDF

    J101-J103

    Abstract: ad9883 LED205 SAA7113 MB86295EB01 MB86295-EB01 j104 J151 J153 J207
    Text: CORAL P MB86295-EB01 Rev. 5.0 April 2004 1.3 CORAL P Evaluation Board Revision 1.3 2004 Fujitsu Microelectronics Europe Page 1 MB86295-EB01 Evaluation Board Manual Revision Control Revision Number Date Description of changes 0.1 9/8/02 Initial Release 0.9


    Original     		MB86295-EB01 J101-J103 ad9883 LED205 SAA7113 MB86295EB01 j104 J151 J153 J207 PDF

    nec 0882

    Abstract: NEc 79A 8582
    Text: 3W, L/S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5 C/W Functional Characteristics 0.2 – 0.1


    Original     		NE6500379A IMT-2000, IMT2000, 24-Hour nec 0882 NEc 79A 8582 PDF

    nec 0882

    Abstract: GRM40X7R104K025BL IMT-2000 NE6500379A NE6500379A-T1
    Text: NEC'S 3W, L/S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5 C/W Functional Characteristics 0.2 – 0.1


    Original     		NE6500379A nec 0882 GRM40X7R104K025BL IMT-2000 NE6500379A NE6500379A-T1 PDF

    transistor NEC D 882 p

    Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor nec 0882 GRM40X7R104K025BL AF127 100A0R5 case transistor 79A IMT-2000
    Text: NEC'S 3W, L/S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5 C/W Functional Characteristics 0.2 – 0.1


    Original     		NE6500379A transistor NEC D 882 p nec d 882 p datasheet nec d 882 p nec d 882 p transistor nec 0882 GRM40X7R104K025BL AF127 100A0R5 case transistor 79A IMT-2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1/2 Multilayer Chip Band Pass Filters(Balance Output Type) For Bluetooth & 2.4GHz W-LAN Conformity to RoHS Directive DEA Series DEA162450BT-7205B1 SHAPES AND DIMENSIONS 0.5max. 5 4 1 2 3 0.25±0.1 0.8±0.2 0.2±0.1 1.6±0.1 6 0.3±0.1 0.1±0.1 Terminal functions


    Original     		DEA162450BT-7205B1 5000MHz] 7500MHz] 2500MHz] 24000-j100ï SDD22 400GHz 500GHz PDF

    NEZ1414-8E

    Abstract: 39.5dB GaAs FET
    Text: 8 W 14 GHz INTERNALLY NEZ1414-8E MATCHED POWER GaAs MES FET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 39.5dB (MIN) PACKAGE OUTLINE T-61 • HIGH GAIN: 6.5 dB TYP • HIGH RELIABILITY GATE SIDE INDICATOR DEPRESSION 0.5 ± 0.1 • CLASS A OPERATION


    Original     		NEZ1414-8E NEZ1414-8E for11 24-Hour 39.5dB GaAs FET PDF

    NE68839

    Abstract: NE68939 NE68939-T1-A NE69039 PC2771T
    Text: NEC'S NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE68939 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 • 4 PIN MINI MOLD PACKAGE: NE68939


    Original     		NE68939 NE68939 NE68839 NE68939-T1-A NE69039 PC2771T PDF

    RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

    Abstract: PC2771T NE68839 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2.tx transistor
    Text: SILICON TRANSISTOR NE68939 NPN SILICON EPITAXIAL TRANSISTOR FEATURES • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 • 4 PIN MINI MOLD PACKAGE: NE68939


    Original     		NE68939 NE68939 9-j11 24-Hour RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ PC2771T NE68839 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2.tx transistor PDF