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    0/EQUIVALENT TO G30N60 Search Results

    0/EQUIVALENT TO G30N60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    0/EQUIVALENT TO G30N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G30N60

    Abstract: G30N60 IGBT JESD-022
    Text: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB30N60 PG-TO-263-3-2 O-263AB) SGB30N60 G30N60 G30N60 IGBT JESD-022

    g30n60hs

    Abstract: G30N60hs IGBT G30N60 SGP30N60HS 600v 30a IGBT SGW30N60HS igbt 600V 30A infineon SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 G30N60HS SGW30N60HS g30n60hs G30N60hs IGBT G30N60 SGP30N60HS 600v 30a IGBT igbt 600V 30A infineon SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21

    g30n60

    Abstract: G30N60 IGBT equivalent to g30n60 1 L 0380 PG-TO-263-3-2 SGB30N60 30mJ
    Text: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB30N60 PG-TO-263-3-2 O-263AB) G30N60 g30n60 G30N60 IGBT equivalent to g30n60 1 L 0380 PG-TO-263-3-2 SGB30N60 30mJ

    g30n60

    Abstract: PG-TO-220-3-1 G30N60 IGBT PG-TO220-3-1 equivalent to g30n60 PG-TO-247-3-21 SGP30N60 SGW30N60 100W-50W g30n60 data sheet
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3-21 G30N60 PG-TO-220-3-1ain g30n60 PG-TO-220-3-1 G30N60 IGBT PG-TO220-3-1 equivalent to g30n60 PG-TO-247-3-21 SGP30N60 SGW30N60 100W-50W g30n60 data sheet

    g30n60c3

    Abstract: TA49051 igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 740 MOSFET TRANSISTOR g30n60
    Text: HGTG30N60C3 S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT January 1997 Features • • • • • Package 63A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating


    Original     		PDF HGTG30N60C3 230ns 150oC O-247 HGTG30N60C3 150oC. g30n60c3 TA49051 igbt g30n60c3 LD26 RHRP3060 740 MOSFET TRANSISTOR g30n60

    g30N60

    Abstract: G30N60 IGBT g30n60 infineon equivalent to g30n60 SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 igbt 1000v 30a
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3 G30N60 SGW30N6ntain g30N60 G30N60 IGBT g30n60 infineon equivalent to g30n60 SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 igbt 1000v 30a

    G30N60

    Abstract: No abstract text available
    Text: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB30N60 P-TO-263-3-2 O-263AB) G30N60 G30N60

    g30n60hs

    Abstract: g30n60 SGW30N60HS 1A20A
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3-21 PG-TO-220-3-1 SGW30N60HS g30n60hs g30n60 1A20A

    g30n60

    Abstract: equivalent to g30n60 G30N60 IGBT g30n60 infineon 0/equivalent to g30n60 PG-TO-247-3-21
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW30N60 g30n60 equivalent to g30n60 G30N60 IGBT g30n60 infineon 0/equivalent to g30n60 PG-TO-247-3-21

    g30n60hs

    Abstract: g30n60 SGW30N60HS SGP30N60HS
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3-21 PG-TO-220-3-1 SGW30N60HS g30n60hs g30n60

    G30N60

    Abstract: copper bond wire infineon G30N60 IGBT
    Text: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB30N60 P-TO-263-3-2 O-263AB) SGB30N60 G30N60 copper bond wire infineon G30N60 IGBT

    G30N60

    Abstract: G30N60 IGBT g30n60 infineon SGW30N60 PG-TO-220-3-1 IGBT 400V 100KHZ 30A igbt 600V 30A
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3 SGW30N60 G30N60 G30N60 IGBT g30n60 infineon PG-TO-220-3-1 IGBT 400V 100KHZ 30A igbt 600V 30A

    g30n60hs

    Abstract: g30n60 RG111 SGW30N60HS
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW30N60HS g30n60hs g30n60 RG111

    g30n60hs

    Abstract: G30N60hs IGBT g30n60 SGP30N60HS G30N60h g30n60hs pspice high frequency igbt SGW30N60HS PG-TO-247-3-21 PG-TO-220-3-1 PG-TO247-3-21
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3-21 G30N60HS g30n60hs G30N60hs IGBT g30n60 SGP30N60HS G30N60h g30n60hs pspice high frequency igbt SGW30N60HS PG-TO-247-3-21 PG-TO-220-3-1 PG-TO247-3-21

    G30N60

    Abstract: G30N60 IGBT equivalent to g30n60
    Text: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB30N60 SGB30N60 G30N60 G30N60 IGBT equivalent to g30n60

    g30n60c3

    Abstract: TA49051 HGTG30N60C3 LD26 RHRP3060 g30n60
    Text: HGTG30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60C3 HGTG30N60C3 150oC. 230ns 150oC g30n60c3 TA49051 LD26 RHRP3060 g30n60

    g30n60

    Abstract: g30n60c3d RHRP3060 TA49051 TA49053 HGTG30N60C3D
    Text: HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC g30n60 g30n60c3d RHRP3060 TA49051 TA49053

    g30n60c3d

    Abstract: G30N60 TA49053 TA49051 HGTG30N60C3D LD26 RHRP3060
    Text: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC g30n60c3d G30N60 TA49053 TA49051 LD26 RHRP3060

    G30N60B3D

    Abstract: G30N60 G30N60B3 HGTG30N60B3D LD26 TA49053 TA49170 TA49172
    Text: HGTG30N60B3D Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60B3D HGTG30N60B3D 150oC. TA49170. TA49053. 150oC G30N60B3D G30N60 G30N60B3 LD26 TA49053 TA49170 TA49172

    G30N60B3

    Abstract: HGTG30N60B3 LD26 TA49170
    Text: HGTG30N60B3 Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC G30N60B3 LD26 TA49170

    g30n60c3d

    Abstract: G30N60 transistor 40411 40411 transistor TA49051 TA49014 No 42 G30N60C3D TA49053 HGTG30N60C3D N-channel enhancement 200V 60A
    Text: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features • • • • • Package o 63A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating


    Original     		PDF HGTG30N60C3D 230ns 150oC O-247 HGTG30N60C3D 150oC. 1-800-4-HARRIS g30n60c3d G30N60 transistor 40411 40411 transistor TA49051 TA49014 No 42 G30N60C3D TA49053 N-channel enhancement 200V 60A

    G30N60

    Abstract: g30n60c3 TA49051 igbt g30n60c3 C110 HGTG30N60C3 LD26 U5025 40422
    Text: HGTG30N60C3 in t e r r ii J a n u a ry . D ata S h eet m i 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    OCR Scan     		PDF HGTG30N60C3 HGTG30N60C3 TA49051. O-247 G30N60 g30n60c3 TA49051 igbt g30n60c3 C110 LD26 U5025 40422

    g30n60c3d

    Abstract: G30N60 TA49014 TA49051 G30N60C TA49053 ic lg 631 LG 631 C110 HGTG30N60C3D
    Text: in t e HGTG30N60C3D r r ii J a n u a ry . m D ata S h eet 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    OCR Scan     		PDF HGTG30N60C3D HGTG30N60C3D TA49051. TA49053. TA49014. g30n60c3d G30N60 TA49014 TA49051 G30N60C TA49053 ic lg 631 LG 631 C110

    G30N60

    Abstract: TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 LG 631 LG 631 IC
    Text: in t e HGTG30N60B3D r r ii J a n u a ry . m D ata S h eet 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    OCR Scan     		PDF HGTG30N60B3D HGTG30N60B3D TA49170. TA49053. G30N60 TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 LG 631 LG 631 IC