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    .2T TRANSISTOR Search Results

    .2T TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    .2T TRANSISTOR Price and Stock

    Phoenix Contact MACX MCR-SL-NAM-2T

    NAMUR signal conditioner for operating proximity sensors and switches. The signals are transmitted to the control level via 2 transistor outputs (passive). Line fault detection - 3-way electrical isolation - SIL 2 - screw connection.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MACX MCR-SL-NAM-2T
    • 1 $212.43
    • 10 $198.27
    • 100 $193.12
    • 1000 $193.12
    • 10000 $193.12
    Buy Now

    Phoenix Contact MACX MCR-SL-NAM-2T-SP

    NAMUR signal conditioner for operating proximity sensors and switches. The signals are transmitted to the control level via 2 transistor outputs (passive). Line fault detection - 3-way electrical isolation - SIL 2 - Push-in connection.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MACX MCR-SL-NAM-2T-SP
    • 1 $212.43
    • 10 $198.27
    • 100 $193.12
    • 1000 $193.12
    • 10000 $193.12
    Buy Now

    Phoenix Contact MACX MCR-EX-SL-NAM-2T

    Ex i NAMUR isolating amplifier For operating proximity sensors and switches in Ex areas. The signals are transmitted via 2 transistor outputs (passive) to the safe area. Line fault detection (LFD) - 3-way isolation - SIL 2.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MACX MCR-EX-SL-NAM-2T
    • 1 $236.55
    • 10 $220.41
    • 100 $215.05
    • 1000 $215.05
    • 10000 $215.05
    Buy Now

    Phoenix Contact MACX MCR-EX-SL-NAM-2T-SP

    Ex i NAMUR isolating amplifier For operating proximity sensors and switches in Ex areas. The signals are transmitted via 2 transistor outputs (passive) to the safe area. Line fault detection (LFD) - 3-way isolation - SIL 2.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MACX MCR-EX-SL-NAM-2T-SP
    • 1 $236.55
    • 10 $220.41
    • 100 $215.05
    • 1000 $215.05
    • 10000 $215.05
    Buy Now

    .2T TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N916

    Abstract: LMBT4403LT1G MMBT4401LT1 MMBT4403LT1 LMBT4403LT1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT4403LT1G • We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403LT1G 2T 3000/Tape & Reel LMBT4403LT3G 2T


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    PDF LMBT4403LT1G 3000/Tape LMBT4403LT3G 10000/Tape 236AB) OT-23 1N916 LMBT4403LT1G MMBT4401LT1 MMBT4403LT1 LMBT4403LT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT4403WT1G 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403WT1G 2T 3000/Tape & Reel LMBT4403WT3G 2T


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    PDF LMBT4403WT1G 3000/Tape LMBT4403WT3G 10000/Tape SC-70

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT4403WT1G 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403WT1G 2T 3000/Tape & Reel LMBT4403WT3G 2T


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    PDF LMBT4403WT1G 3000/Tape LMBT4403WT3G 10000/Tape SC-70

    LMBT4403WT1G

    Abstract: 1N916 MMBT4401LT1 MMBT4403LT1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT4403WT1G 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403WT1G 2T 3000/Tape & Reel LMBT4403WT3G 2T


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    PDF LMBT4403WT1G 3000/Tape LMBT4403WT3G 10000/Tape SC-70 LMBT4403WT1G 1N916 MMBT4401LT1 MMBT4403LT1

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :MMBT4403=2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-23 OT-23 MMBT4403 -150mA -150mA, -15mA 150mA, -20mA

    MMBT4403

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF OT-23 OT-23 MMBT4403 -100A -100A, -150mA -150mA, -15mA 150mA,

    MARKING SMD PNP TRANSISTOR 2t

    Abstract: 2T SMD TRANSISTOR TRANSISTOR SMD 2t sot23 CMBT4403
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


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    PDF ISO/TS16949 OT-23 CMBT4403 C-120 MARKING SMD PNP TRANSISTOR 2t 2T SMD TRANSISTOR TRANSISTOR SMD 2t sot23 CMBT4403

    smd marking cb SOT23 transistor

    Abstract: MARKING SMD PNP TRANSISTOR 2t transistor smd 2t x TRANSISTOR SMD 2t sot23 CMBT4403 TRANSISTOR SMD 85 330 smd transistor 2T 2T smd marking sot-23 2T SMD equivalent Min01
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


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    PDF OT-23 CMBT4403 C-120 smd marking cb SOT23 transistor MARKING SMD PNP TRANSISTOR 2t transistor smd 2t x TRANSISTOR SMD 2t sot23 CMBT4403 TRANSISTOR SMD 85 330 smd transistor 2T 2T smd marking sot-23 2T SMD equivalent Min01

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT4403 = 2T Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


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    PDF OT-23 CMBT4403 C-120

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT4403LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403LT1G 2T 3000/Tape & Reel LMBT4403LT3G


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    PDF LMBT4403LT1G 3000/Tape LMBT4403LT3G 10000/Tape 236AB)

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T


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    PDF OT-23 CMBT4403 C-120

    smd transistor 2T

    Abstract: 2T SMD TRANSISTOR MARKING SMD PNP TRANSISTOR 2t CMBT4403
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


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    PDF OT-23 CMBT4403 C-120 smd transistor 2T 2T SMD TRANSISTOR MARKING SMD PNP TRANSISTOR 2t CMBT4403

    partmarking 5 C

    Abstract: PARTMARKING at
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 - SEPTEMBER 1995 HT2 ✪ PARTMARKING DETAIL - 2T E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO 90 V VCEO 80 V Emitter-Base Voltage


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    PDF 10MHz partmarking 5 C PARTMARKING at

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT4403 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 2 1 MARKING 3 2T SOT-23 1:EMITTER 2:BASE 3:COLLECTOR


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    PDF MMBT4403 MMBT4403 500mA. OT-23 QW-R206-034

    MMBT4403 UTC

    Abstract: No abstract text available
    Text: UTC MMBT4403 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 2 1 MARKING 3 2T SOT-23 1:EMITTER 2:BASE 3:COLLECTOR


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    PDF MMBT4403 MMBT4403 500mA. OT-23 QW-R206-034 MMBT4403 UTC

    ssl2108

    Abstract: SSL21082 sot12 SSL21081T Application Notes
    Text: SSL21081T/2T/3T/4T GreenChip drivers for LED lighting Rev. 2 — 6 December 2011 Preliminary data sheet 1. General description The SSL2108X is a range of high-voltage Integrated Circuits ICs , intended to drive LED lamps in general lighting applications.


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    PDF SSL21081T/2T/3T/4T SSL2108X SSL21081T ssl2108 SSL21082 sot12 SSL21081T Application Notes

    RXB06150W

    Abstract: FO-91 TRANSISTOR package erie capacitor ERIE ceramic capacitor variable capacitor
    Text: Philips Sem iconductors Prelim inarjrspecification - i ^ NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL 3 3 - / 5 ' 1 RXB06150W _ SbE D • 711DflEb D O H b S 45 ^2T FEATURES DESCRIPTION APPLICATIONS


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    PDF RXB06150W FO-91B FO-91 RXB06150W FO-91 TRANSISTOR package erie capacitor ERIE ceramic capacitor variable capacitor

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 - SEPTEMBER 1995 I HT2 Q_ PARTMARKING DETAIL - 2T ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT V CBO 90 V C ollector-E m itter Voltage V CEO


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    PDF 10MHz

    Untitled

    Abstract: No abstract text available
    Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P -N - P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0 .14 "Iprüi Pin configuration 1 = BASE 2 » EMITTER 3 * COLLECTOR ABSOLUTE MAXIMUM RATINGS Colleetor-emitter voltage Collector current DC


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    PDF CMBT4403

    Untitled

    Abstract: No abstract text available
    Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 * EMITTER 3 « COLLECTOR 2.6 2.4 _ 1.02 0.8ST 2.00 0.60 0.40 1.80 ABSOLUTE MAXIMUM RATINGS


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    PDF CMBT4403

    Untitled

    Abstract: No abstract text available
    Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.48 0.38 i 13 . •-■!— ! Pin configuration 1 • 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.60 0.40 0.89* 2.00


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    PDF CMBT4403 23A33T4

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR HT2 PARTMARKING DETAIL - 2T ABSOLUTE MAXIMUM RATINGS PARAM ETER S YM B O L Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at T amtj = 2 5 ° C


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    PDF 10/iA DS337 10MHz

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER 2t>E D • HflSS4S2 QQ1DST7 S ■ Data Sheet No. PD-9.619A T-3^-03 INSULATED GATE BIPOLAR TRANSISTOR International I “ R !Rectifier IRGBC30 600V, S3A FEATURES 600V, 23A, TO-220AB IGBT International Rectifier’s IRG series of Insulated Gate


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    PDF IRGBC30 O-220AB 4aSS452 T-31-Ã

    CMBT4403

    Abstract: No abstract text available
    Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N -P transistor M arking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.09 0.48 0.38 _L 0.70 0.50 1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 1.4 1.2 2.4 R0.1 .004 "


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    PDF CMBT4403 CMBT4403