Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    "SOT-23-6" MARKING BBB Search Results

    "SOT-23-6" MARKING BBB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    "SOT-23-6" MARKING BBB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original     		PDF MBT3906DW1, SMBT3906DW1 MBT3906DW1 OT-23/SOT-323 OT-363 AEC-Q101 MBT3906DW1T1/D

    Portable tv Circuit Diagram schematics

    Abstract: No abstract text available
    Text: 1.24V ADJUSTABLE PRECISION SHUNT REGULATORS Description Features The GM432 is a low-voltage three-terminal adjustable precision shunt regulator with specified thermal stability over full temperature range. Output voltage can be set to any value from Vref 1.24V to 16V by using two external


    Original     		PDF GM432 operat24V OT-23 OT-89 J-STD-020. 900ppm 1500ppm GM432V2 Portable tv Circuit Diagram schematics

    Portable tv Circuit Diagram schematics

    Abstract: Shunt Regulators
    Text: GM432 1.24V ADJUSTABLE PRECISION SHUNT REGULATORS Description Features The GM432 is a low-voltage three-terminal adjustable precision shunt regulator with specified thermal stability over full temperature range. Output voltage can be set to any value from Vref 1.24V to 16V by using two external


    Original     		PDF GM432 GM432 GM432V2 OT-23 OT-89 J-STD-020. 900ppm 1500ppm Portable tv Circuit Diagram schematics Shunt Regulators

    Untitled

    Abstract: No abstract text available
    Text: BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http://onsemi.com NPN/PNP Duals Complementary These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.


    Original     		PDF BC846BPDW1, BC847BPDW1, BC848CPDW1 363/SCâ BC846BPDW1T1/D

    smd transistor marking z8

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF18090B Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090B MRF18090BR3 MRF18090BSR3 smd transistor marking z8

    MRF18060A

    Abstract: No abstract text available
    Text: Document Number: MRF18060A Rev. 11, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18060ALR3 LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF18060A MRF18060ALR3 MRF18060A

    Z1 Transistor

    Abstract: smd transistor marking j2 smd transistor marking z3 465A MARKINGS MRF18060A
    Text: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 10, 10/2008 RF Power Field Effect Transistor MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18060A MRF18060ALSR3 MRF18060A Z1 Transistor smd transistor marking j2 smd transistor marking z3 465A MARKINGS

    SMD Transistor z6

    Abstract: smd transistor marking z3 smd transistor marking z1 smd transistor z4 SMD transistor 2x sot 23 C5 MARKING TRANSISTOR transistor 6 pin SMD Z2 transistor smd z3 J305 equivalent transistor Z1 SMD
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18060ALR3 LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18060ALR3 MRF18060A SMD Transistor z6 smd transistor marking z3 smd transistor marking z1 smd transistor z4 SMD transistor 2x sot 23 C5 MARKING TRANSISTOR transistor 6 pin SMD Z2 transistor smd z3 J305 equivalent transistor Z1 SMD

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF18090B Rev. 7, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090B MRF18090BR3 MRF18090BSR3 MRF18090BR3

    smd transistor marking j6

    Abstract: SMD Transistor z6 C5 MARKING TRANSISTOR transistor 6 pin SMD Z2 marking Z4 smd z5 transistor transistor smd z9 Z9 TRANSISTOR SMD 465B BC847
    Text: Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from


    Original     		PDF MRF18090B MRF18090BR3 MRF18090BSR3 MRF18090BR3 smd transistor marking j6 SMD Transistor z6 C5 MARKING TRANSISTOR transistor 6 pin SMD Z2 marking Z4 smd z5 transistor transistor smd z9 Z9 TRANSISTOR SMD 465B BC847

    465B

    Abstract: BC847 GSM1900 LP2951 MRF18090B MRF18090BR3 MRF18090BSR3 smd transistor marking j8 smd transistor marking z8
    Text: Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090B MRF18090BR3 MRF18090BSR3 MRF18090BR3 465B BC847 GSM1900 LP2951 MRF18090B MRF18090BSR3 smd transistor marking j8 smd transistor marking z8

    smd transistor marking z1

    Abstract: marking TRANSISTOR SMD nf c4 MRF18060A
    Text: Freescale Semiconductor Technical Data MRF18060A Rev. 7, 1/2005 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18060AR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18060A GSM1805 MRF18060AR3 MRF18060ALSR3 smd transistor marking z1 marking TRANSISTOR SMD nf c4

    smd transistor marking z8

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF18090B Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090B MRF18090BR3 MRF18090BSR3 smd transistor marking z8

    j288

    Abstract: marking TRANSISTOR SMD nf c4
    Text: Document Number: MRF18060A Rev. 8, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18060ALR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF18060A MRF18060ALR3 MRF18060ALSR3 MRF18060A j288 marking TRANSISTOR SMD nf c4

    MRF18060A

    Abstract: transistor 6 pin SMD Z2 BC847 GSM1800 LP2951 MRF18060 MRF18060ALR3 MRF18060ALSR3 smd z5 transistor
    Text: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18060ALR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF18060A MRF18060ALR3 MRF18060ALSR3 MRF18060ALR3 MRF18060A transistor 6 pin SMD Z2 BC847 GSM1800 LP2951 MRF18060 MRF18060ALSR3 smd z5 transistor

    TV booster diagram

    Abstract: mhw* 820-1 DATASHEET pcb assembly 85501 application circuits of ic 74121 MHW6342TN motorola 18310 MHL9236MN DL210 010485 GP 809 DIODE
    Text: RF Linear Amplifiers Freescale Semiconductor Device Data DL210 Rev. 3 3/2007 RF Product Portfolio freescale.com/rf Freescale Semiconductor offers RF Solutions a broad portfolio of RF products that utilize technologies such as LDMOS, GaAs, SiGe:C, RF CMOS


    Original     		PDF DL210 TV booster diagram mhw* 820-1 DATASHEET pcb assembly 85501 application circuits of ic 74121 MHW6342TN motorola 18310 MHL9236MN DL210 010485 GP 809 DIODE

    uhf linear amplifier module

    Abstract: GP 809 DIODE MMH3101 81348 MHW7185CL 33048 Power Amplifier MMIC 2.6 GHz 53368 Freescale Semiconductor hybrid amplifier modules MARKING T MMIC AMPLIFIER 32DB GAIN
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor Device Data. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 CATV Distribution Amplifier Modules. DL209 Rev. 2 2/2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 CATV Distribution Amplifier Modules


    Original     		PDF DL209 uhf linear amplifier module GP 809 DIODE MMH3101 81348 MHW7185CL 33048 Power Amplifier MMIC 2.6 GHz 53368 Freescale Semiconductor hybrid amplifier modules MARKING T MMIC AMPLIFIER 32DB GAIN

    smd transistor marking j1

    Abstract: No abstract text available
    Text: MRF6522 - 70 Rev. 7, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source


    Original     		PDF MRF6522 MRF6522-70R3 MRF6522- smd transistor marking j1

    transistor marking PB C8

    Abstract: NI-780S SMD transistor 2x sot 23
    Text: Freescale Semiconductor Technical Data MRF18060B Rev. 6, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18060B GSM1930 MRF18060BLSR3 transistor marking PB C8 NI-780S SMD transistor 2x sot 23

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF18060B Rev. 6, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18060B GSM1930 MRF18060BLSR3

    Untitled

    Abstract: No abstract text available
    Text: MRF6522 - 70 Rev. 7, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source


    Original     		PDF MRF6522 MRF6522-70R3 MRF6522-

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6522 - 70 Rev. 8, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source


    Original     		PDF MRF6522 MRF6522-70R3 MRF6522-

    diode tfk s 220

    Abstract: tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321
    Text: 17E I I B^SDDRb ODD^bS^ 3 • m ilF iy iim iM electronic Crt*tiv«1«chnolo$tt ALGG i l ? ■ TFK 3080 D TELEFUNKEN ELECTRONIC [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T-33-3£~ Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)


    OCR Scan     		PDF S1000 O888E T0126 15A3DIN diode tfk s 220 tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321

    2761 l transistor

    Abstract: transistor k 2761 S921TS a 2761 to-220 k 2761 transistor ic 921 2761 a 14A3DIN TRANSISTOR BC 239 c transistor A 2761
    Text: TELEFUNKEN ELECTRONIC 17E D fi'îEOQ'ïb ODOTbSB M • ALG6 m S 921TS • S 923 TS r - 3i-i-r Silicon PNP Epitaxial Planar RF Transistors Applications; For telephone sets, telecommunication circuits, video driver and power stages in TV receivers and monitors and general in circuits with high supply voltage


    OCR Scan     		PDF 921TS 15A3DIN E--07 2761 l transistor transistor k 2761 S921TS a 2761 to-220 k 2761 transistor ic 921 2761 a 14A3DIN TRANSISTOR BC 239 c transistor A 2761