SSM6J808R
|
|
Toshiba Electronic Devices & Storage Corporation
|
MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 |
|
|
SSM6K819R
|
|
Toshiba Electronic Devices & Storage Corporation
|
MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 |
|
|
SSM6K809R
|
|
Toshiba Electronic Devices & Storage Corporation
|
MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 |
|
|
SSM6K504NU
|
|
Toshiba Electronic Devices & Storage Corporation
|
MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 |
|
|
MG800FXF1ZMS3
|
|
Toshiba Electronic Devices & Storage Corporation
|
N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD |
|
|