JS28F128M29EWL
Abstract: JS28F128M29EWH JS28F128M JS28F128M29EWHF JS28F128M29EW JR28F032M29EWT PC28F128M29EWL JS28F064M29EWXX PZ28F032M29EWHA M29EW
Text: 32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX Features • VPP/WP# pin protection
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128Mb:
JR28F032M29EWXX;
PZ28F032M29EWXX;
JS28F064M29EWXX
PC28F064M29EWXX;
JR28F064M29EWXX;
PZ28F064M29EWXX
JS28F128M29EWXX;
PC28F128M29EWXX;
RC28F128M29EWXX
JS28F128M29EWL
JS28F128M29EWH
JS28F128M
JS28F128M29EWHF
JS28F128M29EW
JR28F032M29EWT
PC28F128M29EWL
PZ28F032M29EWHA
M29EW
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M29F STMicroelectronics
Abstract: m29F DATASHEET "NOR Flash" 4MB 256mb flash STMicroelectronics tsop56 TFBGA48 m28w160es TSOP40 Device M29F010B M29W160 nor flash of 4mb
Text: NOR Flash memories for consumer applications January 2006 www.st.com/flash Outstanding solutions for every requirement The broad and differentiated consumer application market has an ongoing demand for stable and reliable standard NOR Flash devices, in a variety of densities with specific
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TBGA64
BRFLASHCON0106
M29F STMicroelectronics
m29F DATASHEET
"NOR Flash" 4MB
256mb flash STMicroelectronics tsop56
TFBGA48
m28w160es
TSOP40
Device M29F010B
M29W160
nor flash of 4mb
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SAMSUNG MCP
Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)
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KBB0xB400M
16Mx16)
4Mx16)
80-Ball
80x12
SAMSUNG MCP
ECH information
KBB0xB400M
BA102
ba4901
UtRAM Density
BA5101
samsung NAND memory
BGA180
ba30 transistor
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Untitled
Abstract: No abstract text available
Text: 64Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W640GH, M29W640GL M29W640GT, M29W640GB Features • Common Flash interface – 64-bit security code • 128-word extended memory block – Extra block used as security block or to store additional information
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M29W640GH,
M29W640GL
M29W640GT,
M29W640GB
16-word/32-byte
M29W640GH/L
M29W640GT/B
09005aef84e35115
640GH/L
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Untitled
Abstract: No abstract text available
Text: 64Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W640GH, M29W640GL M29W640GT, M29W640GB Features • Common Flash interface – 64-bit security code • 128-word extended memory block – Extra block used as security block or to store additional information
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M29W640GH,
M29W640GL
M29W640GT,
M29W640GB
64-bit
128-word
0020h
M29W640GH:
227Eh
220Ch
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M29W640GT70
Abstract: micron nor Flash M29W640GT70N3F M29W640GH7 M29W640GL70Z A2112
Text: 64Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W640GH, M29W640GL M29W640GT, M29W640GB Features • Common flash interface – 64-bit security code • 128-word extended memory block – Extra block used as security block or to store additional information
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M29W640GH,
M29W640GL
M29W640GT,
M29W640GB
16-word/32-byte
M29W640GH/L
M29W640GT/B
09005aef84e35115
640GH/L
M29W640GT70
micron nor Flash
M29W640GT70N3F
M29W640GH7
M29W640GL70Z
A2112
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Untitled
Abstract: No abstract text available
Text: 64Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W640FT, M29W640FB Features • UNLOCK BYPASS PROGRAM command – Faster production/batch programming • VPP/WP# pin for fast program and write protect • Temporary block unprotection mode
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M29W640FT,
M29W640FB
64-bit
0020h
M29W640FT:
22EDh
M29W640FB:
22FDh
48-pin
48-ball
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BA204
Abstract: ba148 BA238 SAMSUNG MCP BA167 MCP MEMORY BA262 BA259 UtRAM Density BA153
Text: Preliminary MCP MEMORY KBF0x0800M Document Title Multi-Chip Package MEMORY 128M Bit 8Mx16 Synchronous Burst , Multi Bank NOR Flash *2 / 64M Bit(4Mx16) Synchronous Burst UtRAM *2 Revision History Revision No. History 0.0 Draft Date Initial Draft (128M NOR Flash M-die_rev0.7)
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KBF0x0800M
8Mx16)
4Mx16)
115-Ball
80x13
BA204
ba148
BA238
SAMSUNG MCP
BA167
MCP MEMORY
BA262
BA259
UtRAM Density
BA153
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Untitled
Abstract: No abstract text available
Text: FBM710DTK9_057 Specifications • Fully 32-bit RISC architecture with 2 way, 4K-byte I-Cache and 4K-byte D-Cache: ARM7TDMI-BASED MCU, Winbond W90P710CD at 80 MHz. ■ Embedded system: uClinux-2.4 (2MByte space) share with external NOR-Flash ROM. ■ 16-bit external bus supported: 4Mbyte NOR-Flash ROM and 16Mbyte SDRAM.
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FBM710DTK9
32-bit
W90P710CD
16-bit
16Mbyte
768KHz-RTC.
RS232
18/24-bit
12-bit
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256kx8 sram 5v
Abstract: toshiba TSOP toshiba Nand flash bga SRAM 512*8 NAND FLASH BGA 256kx8 sram 128kx16 toshiba nand Toshiba America Electronics toshiba nand flash 4Mb
Text: Toshiba America Electronics Search SRAM - Low Power Asynchronous Press Releases | Select One DRAM Components DRAM Components Archive DRAM Modules DRAM Modules (Archive) Flash - NOR Flash - NAND 5V Flash - NAND 3.3V Flash - SmartMedia Multi-Chip Package SRAM - Low Power
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TC551001C,
128Kx8
TC551001CI,
TC554001A-V
TC554001AI
ismatch/20000921/09112000/TOSH/09112000/1
TC55V200
TC55V2001
TC55V2001I
256kx8 sram 5v
toshiba TSOP
toshiba Nand flash bga
SRAM 512*8
NAND FLASH BGA
256kx8 sram
128kx16
toshiba nand
Toshiba America Electronics
toshiba nand flash 4Mb
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25U4035
Abstract: 25U1635E uson+8+land+pattern
Text: The Ultimate Performance Flash Memory Macronix Serial Multi I/O MXSMIOTM Flash www.macronix.com Contents Why Use MXSMIOTM Family? 3 ● Advantages of Macronix Serial Multi-I/O Flash Family 4 ● Worldwide NOR Flash Trend 5 ● The Fastest Performance Serial Flash on the Market
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Micron 4Mb NOR FLASH
Abstract: No abstract text available
Text: M25PE40 Serial Flash Memory Features M25PE40 4Mb 3V NOR Serial Flash Memory Serial Flash Memory with Byte Alterability, 75 MHz SPI bus, Standard Pinout Features • • • • • • • • • • • • • • 4Mb of page-erasable Flash memory 2.7V to 3.6V single supply voltage
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M25PE40
8013h)
09005aef845660f0
Micron 4Mb NOR FLASH
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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Atmel part numbering
Abstract: FBGA48 TFBGA48 te28f320b3bd 49XX TSOP32 Package TE28F320B3TD MBM29F080A tsop48 te28f320c3bd
Text: Standard NOR Flash family Cross-reference guide September 2005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties
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CRNORFLASH1005
Atmel part numbering
FBGA48
TFBGA48
te28f320b3bd
49XX
TSOP32 Package
TE28F320B3TD
MBM29F080A
tsop48
te28f320c3bd
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Untitled
Abstract: No abstract text available
Text: 75MHz, Serial Peripheral Interface Flash Memory Features Micron Serial NOR Flash Memory 3V, 4Mb Page Erasable with Byte Alterability M45PE40 Features • • • • • • • • • • • • SPI bus-compatible serial interface 75 MHz clock frequency MAX
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75MHz,
M45PE40
4013h)
09005aef845660fc
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Untitled
Abstract: No abstract text available
Text: 75MHz, Serial Peripheral Interface Flash Memory Features Micron Serial NOR Flash Memory 3V, 4Mb Page Erasable with Byte Alterability M45PE40 Features • • • • • • • • • • • • SPI bus-compatible serial interface 75 MHz clock frequency MAX
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75MHz,
M45PE40
4013h)
09005aef845660fc
m45pe40
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TSOP48 outline
Abstract: cons EMC2112 M29DW323 M29DW324 M29DW640D TFBGA48
Text: FLASH NOR HIGH DENSITY & CONSUMER M29DWxxx FAMILY Multiple Bank May, 2004 HD & Cons. Division -VAM29DW.ppt – ptfl0402-504 STMicroelectronics www.st.com/flash Family Overview ¾Densities from 32Mb to 64Mb ¾Wide application area covered ¾0.15µm process technology
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M29DWxxx
-VAM29DW
ptfl0402-504
M29DW
ptfl0402-504-
M29DW323
2Mbx16)
TSOP48 outline
cons
EMC2112
M29DW323
M29DW324
M29DW640D
TFBGA48
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tsop-56 samsung
Abstract: TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga
Text: TOSHIBA FLASH Network FCRAM NOR Flash SRAM Memory Selection Guide PSRAM NAND Flash Multi-Chip Packages Memory Cards September 2004 Toshiba America Electronic Components TOSHIBA Toshiba offers one of the widest varieties of memory products of any semiconductor manufacturer. Based on the three core memory technologies:
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576Mb
256Mb
tsop-56 samsung
TC58DVM72A1FTI0
tc58fvm5t2atg
TSOP1-48
THNCF1G02DG
THNCF1G02DGI
SD-M512
TC58NVG0S3AFTI5
THNCF128MMG
toshiba Nand flash bga
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s5l840fx
Abstract: S5L840F calmRISC16 P9336 and pin diagram of MMC 4017 CalmRISC-16 player audio to flash memoy s5l8 samsung i2s S5H5002
Text: CPAD-WALTZ S5L840F Internet Audio Decoder for Flash Memory Media Data Sheet INTRODUCTION S5L840F is a single chip digital audio player IC supporting various compressed audio format on Flash Memory Media. S5L840F provides 2Mbits of embedded NOR flash memory and 76Kbytes of SRAM requiring no external
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S5L840F)
S5L840F
76Kbytes
16bit
CALMRISC16TM)
24bit
MAC2424
CalmRISC16)
s5l840fx
calmRISC16
P9336
and pin diagram of MMC 4017
CalmRISC-16
player audio to flash memoy
s5l8
samsung i2s
S5H5002
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HX8819
Abstract: Himax TCON HA1202 HX8817 himax tcon HIMAX hx8819 CERAMATE TECHNICAL T-CON 8834
Text: Ceramate Digital Photo Frame Block 4Mb SDRAM 8Mb NAND Flash Unity OPTO Himax IRM MIM3388 SERIES MIM538B SERIES T-CON HX8817/8834 Bluetooth HAIRERIC or NOR Flash CPT Analog Panel Himax CPT T-CON HX8819/8824/8834 Digital Panel USB I/O ESD Protection CDA12T1G
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MIM3388
MIM538B
HX8817/8834
HX8819/8824/8834
CDA12T1G
CP1117
CO4558
CO5532
CO4580
HA1202/1201/1212/1211/1232/1231/1102/1209
HX8819
Himax
TCON
HA1202
HX8817
himax tcon
HIMAX hx8819
CERAMATE TECHNICAL
T-CON
8834
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Untitled
Abstract: No abstract text available
Text: M25P32 Serial Flash Embedded Memory Features M25P32 32Mb 3V NOR Serial Flash Embedded Memory Features • • • • • • • • • • Electronic signature – JEDEC-standard 2-byte signature 2016h – Unique ID code (UID) and 16 bytes of common Flash interface (CFI) data
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M25P32
2016h)
09005aef84566541
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Micron 32MB NOR FLASH
Abstract: Micron 4Mb NOR FLASH m25p32 micron
Text: M25P32 Serial Flash Embedded Memory Features M25P32 32Mb 3V NOR Serial Flash Embedded Memory Features • • • • • • • • • • Electronic signature – JEDEC-standard 2-byte signature 2016h – Unique ID code (UID) and 16 bytes of common Flash interface (CFI) data
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M25P32
512Kb
2016h)
09005aef84566541
Micron 32MB NOR FLASH
Micron 4Mb NOR FLASH
m25p32 micron
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Untitled
Abstract: No abstract text available
Text: M25PX32 Serial Flash Embedded Memory Features M25PX32 3V NOR Serial Flash Embedded Memory 32Mb, Dual I/O, 4KB Subsector Erase, Serial Flash Memory with 75 MHz SPI Bus Interface Features • • • • • • • • • Write protections – Software write protection: applicable to every
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M25PX32
64-byte
09005aef845665a9
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lccr
Abstract: No abstract text available
Text: • NOR Flash Based SMART1 Modular Technologies Custom designs available FLASH MINIATURE CARDS OVERVIEW (60-pad NICIF Standard in 2MB and 4MB capacities, higher densities in development) The MiniCard brings power and maneuverability to mobile computing. We have low power, 02273732
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OCR Scan
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PDF
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60-pad
150mA
SM9FLAMC04
OSGM1MCR1XI29"
lccr
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