CVCO55BE-3245-3500
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3245 MHz 20.0 VDC 3500 MHz Tuning Voltage: 1.0 Supply Voltage: 4.75 5.0 5.25 VDC +2.5 +5.0 dBm 38 mA Output Power: Supply Current: nd
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100kHz
CVCO55BE-3245-3500
12-March-08
CVCO55BE-3245-3500
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1N5825
Abstract: 2N6052 2N6058 2N6059 MSD6100
Text: ON Semiconductort PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general–purpose amplifier and low frequency switching applications. 2N6058 2N6059* • High DC Current Gain — • hFE = 3500 Typ @ IC = 5.0 Adc Collector–Emitter Sustaining Voltage — @ 100 mA
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2N6052*
2N6058
2N6059*
2N6052,
2N6059
r14525
2N6052/D
1N5825
2N6052
2N6058
2N6059
MSD6100
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2N6052G
Abstract: 1N5825 2N6052 2N6059 MSD6100 npn transistor TO-3 5 amp 140 volts
Text: 2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA
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2N6052
O-204AA
2N6052G
1N5825
2N6052
2N6059
MSD6100
npn transistor TO-3 5 amp 140 volts
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2n6059
Abstract: 100 amp darlington transistors 2N6058 2n6052
Text: ON Semiconductort PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general−purpose amplifier and low frequency switching applications. 2N6058 2N6059* • High DC Current Gain — • hFE = 3500 Typ @ IC = 5.0 Adc Collector−Emitter Sustaining Voltage — @ 100 mA
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2N6052*
2N6058
2N6052,
2N6059
2N6059*
100 amp darlington transistors
2n6052
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CVCO55BE-3350-3500
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3350 MHz 4.7 VDC 3500 MHz Tuning Voltage: 0.3 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +0.5 +2.5 +4.5 dBm 20 mA Pushing: 2.0 MHz/V
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10kHz
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CVCO55BE-3350-3500
12-March-08
CVCO55BE-3350-3500
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3350 MHz 16 VDC 3500 Tuning Voltage: MHz 0.1 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +3.0 +5.0 +7.0 dBm 30 40 mA Harmonic Suppression 2 Harmonic :
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100kHz
CVCO55CC
CVCO55CC-3350-3500
25-Feb-08
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smd diode code 6N
Abstract: Q65110A9698
Text: Golden DRAGON Lead Pb Free Product - RoHS Compliant LCW W5SM Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klarer Silikon - Verguss, Chip level conversion • Typischer Lichtfluss: 75 lm bei 350 mA und bis zu 154 lm bei 1 A (3500 K)
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ic cx 0462
Abstract: S18DE Q65110A9698 LCWW5SM Q65110A9694
Text: Golden DRAGON Lead Pb Free Product - RoHS Compliant LCW W5SM Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klarer Silikon - Verguss, Chip level conversion • Typischer Lichtfluss: 75 lm bei 350 mA und bis zu 154 lm bei 1 A (3500 K)
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D-93055
ic cx 0462
S18DE
Q65110A9698
LCWW5SM
Q65110A9694
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ah128g
Abstract: No abstract text available
Text: AH128 ¼W High Linearity InGaP HBT Amplifier Product Features • 60 – 3500 MHz • +24.6 dBm P1dB • +41.5 dBm Output IP3 • 16.6 dB Gain @ 2140 MHz • 115 mA current draw • +5V Single Supply • MTTF > 100 Years • Lead-free/Green/RoHS-compliant
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AH128
AH128
OT-89
1-800-WJ1-4401
ah128g
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smd code book 9u
Abstract: Lm 373 smd transistor cy CX 0461
Text: Golden DRAGON Lead Pb Free Product - RoHS Compliant LCW W5SM Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klarer Silikon - Verguss, Chip level conversion • Typischer Lichtfluss: 75 lm bei 350 mA bis zu 154 lm bei 1 A (3500 K) • Besonderheit des Bauteils: hocheffiziente
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AH128-89PCB900
Abstract: ah128g aclr ip3
Text: AH128 ¼W High Linearity InGaP HBT Amplifier Product Features • 60 – 3500 MHz • +25 dBm P1dB • +40 dBm Output IP3 • 16.9 dB Gain @ 2140 MHz • 115 mA current draw • +5V Single Supply • MTTF > 100 Years • Lead-free/Green/RoHS-compliant SOT-89 Package
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AH128
AH128
OT-89
AH128-89PCB900
ah128g
aclr ip3
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LP2966
Abstract: LP2966IMM-3333 LP2966IMM-3336 LP2966IMM-3636 LP2966IMM-5050 LP2966IMMX-3333 LP2966IMMX-3336 LP2966IMMX-3636 LP2966IMMX-5050 laab
Text: LP2966 Dual 150mA Ultra Low-Dropout Regulator General Description Features The LP2966 dual ultra low-dropout LDO regulator operates from a +2.70V to +7.0V input supply. Each output delivers 150mA over full temperature range. The IC operates with extremely low drop-out voltage and quiescent current, which
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LP2966
150mA
LP2966
LP2966IMM-3333
LP2966IMM-3336
LP2966IMM-3636
LP2966IMM-5050
LP2966IMMX-3333
LP2966IMMX-3336
LP2966IMMX-3636
LP2966IMMX-5050
laab
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Q62702-P3604
Abstract: Q62702-P5207 ic 4510 SFH 5110-38 SFH 3410
Text: SI-FOTODETEKTOREN SILICON PHOTODETECTORS 1. Foto IC für Fernsteuerung 1. Photo IC for Remote Control TA = 25 °C Gehäuse Package TA = 25 °C Typ Type Frequenz Frequency f kHz SFH 5110-30 1 Min. Bestrahlungsstärke 1) Min. threshold irradiance Halbwinkel
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Q62702-P5088
Q62702-P5089
Q62702-P5090
Q62702-P5091
Q62702-P5092
Q62702-P5257
Q62702-P5014
Q62702-P5200
Q62702-P5043
Q62702-P5209
Q62702-P3604
Q62702-P5207
ic 4510
SFH 5110-38
SFH 3410
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LP2966IMM-1833
Abstract: No abstract text available
Text: LP2966 Dual 150mA Ultra Low-Dropout Regulator General Description Features The LP2966 dual ultra low-dropout LDO regulator operates from a +2.70V to +7.0V input supply. Each output delivers 150mA over full temperature range. The IC operates with extremely low drop-out voltage and quiescent current, which
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LP2966
150mA
LP2966
LP2966IMM-1833
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SPX33
Abstract: transistor 7150 SPX53 LC 7130 4N26 Photodiode transistor 7550 4n33 4n35 04 transistor transistor lf SPX7273
Text: Optically Coupled Isolators 6 Pin Dual-in-Line UL RECOGNIZED TO 3500 VAC — FILE E58979 'Type Current transfer ratio At specified forward1 current (lF) and Vce CTR(%) min. max. lF(ma) VCE(volts) Input to output isolation voltage Collector breakdown <lc = 100 ì*A)
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E58979
VCE-10V)
SPX26
SPX33
SPX53
6N138,
6N139
6N135,
6N136
transistor 7150
LC 7130
4N26 Photodiode
transistor 7550
4n33 4n35
04 transistor
transistor lf
SPX7273
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Untitled
Abstract: No abstract text available
Text: LES DEPT 1 i 2 3 4 2 5 6 ? 8 9 10 II 12 NC JZ PARI NAME: S T O U G H T O N , MA FEMALE PART - j- § PART NO: CUSTOMER DRAWING TERMINAL NUMBER 3500H MA T E R 1AL 1 0 9 / -5 FINISH OC S T A MP 3500 H 10 9 A - 5 .016 R 15 T ± .0 0 0 5 TH ICK 83.0-66.5 BRASS
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3500H
I09A-5R)
S000076
S000042
S000002
56joAit
3500H
l09-5-REV
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Telefunken EL12
Abstract: EL12 K2XA Telefunken 1938 telefunken ra 200 telefunken ef Telefunken el 12
Text: TELEFUNKEN N e tz r ö h r e fü r W - H e iz u n g in d ir e k t g e h e iz t E n d p e n to d e Heizspannung Heizstrom Betriebswerte: EL 12 1. Uf 1, 6 ,3 1,2 Volt Am p 250 250 -7 72 8 5,5 15 30 9 0 ' 3500 4,5 8 10 0,3 Volt Volt Volt mA mA »/« mA/V kQ
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010743-a
010743-b
020743-a
020743-b
160839-a
160839-b
170839-a
170839-b
23093aa-a
Telefunken EL12
EL12
K2XA
Telefunken 1938
telefunken ra 200
telefunken ef
Telefunken el 12
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CSA-C22
Abstract: TTC-282SL
Text: REV. S tatu s ISSUE 1 9 / 1 5 / 9 5 TS A. Electrical specifications @ 25 ° C 1. Pri Source Impedance; 600 0 ±10% 2. Sec Load Impedance; 600 0 3. DC Unbalance; 0 mA 4. Frequency Response; ± 0 .2 5 dB 300 to 3500 Hz, OdBm 5. Insertion Loss; 1.1 ± 0 .2 5 dB MAX @ 1 KHz, OdBm
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600Hz,
-10dBm
E138028
W1399
ACAD\TTC\A1113991
TTC-282SL
CSA-C22
TTC-282SL
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ntc 10K B 3950
Abstract: ntc 100K B 3950 of thermistor 4.7K ohms ntc NTC Thermistor 2.2k 100k 3950 NTC thermistor 100K 3950 of thermistor 47K ohms ntc 3950 thermistor 100K thermistor ntc 10k 3950 10k 4050
Text: THERMISTOR PRODUCTS NTC THERMISTOR FOR TEMPERATURE SENSING A N D COMPENSATING m ufíntn A tH c m to r i * £ 7 e c frc *ic $ NTH5G Series NTH5G, reflow soldering type 0805 sized chip NTC Thermistor, offers high stability in environment and wide resistance range
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10Pand
NTH5G16P
NTH5G20P
NTH5G10P
10mW/cC
TH5G20P
CG01-H
ntc 10K B 3950
ntc 100K B 3950
of thermistor 4.7K ohms ntc
NTC Thermistor 2.2k
100k 3950
NTC thermistor 100K 3950
of thermistor 47K ohms ntc
3950 thermistor 100K
thermistor ntc 10k 3950
10k 4050
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2SC2570
Abstract: 2sc2570 transistor NE02132
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,
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NE021
NE02107
PACKAGEOUTUNE33
OT-23)
b427525
00b5b07
2SC2570
2sc2570 transistor
NE02132
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TLP552
Abstract: No abstract text available
Text: TO SH IBA TLP552 TOSHIBA PHOTOCOUPLER GaAM s IRED +PHOTO IC TLP552 ISOLATED LINE RECEIVER SIMPLEX/MULTIPLEX DATA TRANSMISSION COMPUTER-PERIPHERAL INTERFACE MICROPROCESSOR SYSTEM INTERFACE DIGITAL ISOLATION FOR A/ D, D / A CONVERSION The TOSHIBA TLP552 is a photocoupler which combines a GaA£As
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TLP552
TLP552
2500Vrms
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BFP91/A
Abstract: bfq 85 BFQ22 2N918 BFP10 BFQ63 BFT50 BFP91A BFP96
Text: S G . S —THOMSON 7 1 C D | 7 = 1 5 ^ 3 ? GaG4fifc,b 1 1 ;7 -33*^/ THOfyîSOrj S E R f llC O R S D U C T O R S _ 1 . 1000 MHz class A low noise for small signal applications P.ot V BR CEO Types Package fî @ ic Gp @ Iq /
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0Q04flt
2N918
BFT50959
BFT50
BFQ63
BFP10
CB-233
BFP91/A
bfq 85
BFQ22
BFP91A
BFP96
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E30-32
Abstract: E30-33 E2537
Text: 25-30 Watt DC to DC Converters FEATURES 2 5 W Is o la te d O utput 2:1 I n p u t R a n g e High E f f i c ie n c y Up To 8 5 % R e m o t e O n / O ff C o n tr o l S ix - S i d e d S h i e l d MODEL LIST SPECIFICATIONS All S p e c if ic a t i o n s a r e T y p i c a l a t N o m i n a l L i n e ,
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30WattDC
20MHz
75rnVp-p
655mA
E30-32
E30-33
E2537
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TLP2630
Abstract: No abstract text available
Text: TO SH IBA TLP2630 TOSHIBA PHOTOCOUPLER G aA M s IRED & PHOTO IC TLP2630 DEGITAL LOGIC ISOLATION TELE-COMMUNICATION ANALOG DATA EQUIPMENT CONTROL MICROPROCESSOR SYSTEM INTERFACE The T O SH IBA TLP2630 dual photocoupler consists of a pair of GaA€As light emitting diode and integrated high gain, high speed
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TLP2630
TLP2630
2500Vrms
UL1577,
E67349
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