Untitled
Abstract: No abstract text available
Text: LM2426 LM2426 Monolithic Triple Channel 30 MHz DTV Driver Literature Number: SNOSA62C LM2426 Monolithic Triple Channel 30 MHz DTV Driver General Description Features The LM2426 is an integrated high voltage CRT driver circuit designed for use in HDTV applications. The IC contains
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LM2426
LM2426
SNOSA62C
11-lead
O-220
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Signal Path designer
Abstract: No abstract text available
Text: Device is Obsolete LM2422TE LM2422TE 220V Monolithic Triple Channel 30 MHz CRT DTV Driver Literature Number: SNOSAL1C November 2006 LM2422TE 220V Monolithic Triple Channel 30 MHz CRT DTV Driver General Description Features The LM2422 is a triple channel high voltage CRT driver
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LM2422TE
LM2422TE
LM2422
Signal Path designer
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Untitled
Abstract: No abstract text available
Text: LM2422 LM2422 220V Monolithic Triple Channel 30 MHz CRT DTV Driver Literature Number: SNOSAL7C LM2422 220V Monolithic Triple Channel 30 MHz CRT DTV Driver General Description Features The LM2422 is a triple channel high voltage CRT driver circuit designed for use in DTV applications. The IC contains
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LM2422
LM2422
11-lead
O-220
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Untitled
Abstract: No abstract text available
Text: BLS6G2735L S -30 single-ended S-band LDMOS transistor Cover the entire S-band with one 30 W driver Covering the whole 2700 MHz to 3500 MHz S-band frequency range, the BLS6G2735L(S)-30 30 W single-ended ceramic LDMOS transistor delivers unparalleled performance. Whether
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BLS6G2735L
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Transistor J550
Abstract: MRF426 "30 mhz" driver Amplifier 100 watt hf transistor 12 volt 1N4997 2204B MOTOROLA LINEAR HF MOTOROLA MRF426
Text: MOTOROLA Order this document by MRF426/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics —
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MRF426/D
MRF426
MRF426/D*
Transistor J550
MRF426
"30 mhz" driver Amplifier
100 watt hf transistor 12 volt
1N4997
2204B
MOTOROLA LINEAR HF
MOTOROLA MRF426
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Transistor J550
Abstract: VK200-20/4B choke vk200 input output npn 547 transistor "30 mhz" driver Amplifier vk200 1N4997 2204B MRF426 J550
Text: Order this document by MRF426/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics —
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MRF426/D
MRF426
Transistor J550
VK200-20/4B
choke vk200
input output npn 547 transistor
"30 mhz" driver Amplifier
vk200
1N4997
2204B
MRF426
J550
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MRF314
Abstract: No abstract text available
Text: MRF314 The RF Line NPN Silicon Power Transistor 30W, 30-200MHz, 28V Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • • • M/A-COM Products Released - Rev. 05202009 Product Image Guaranteed performance at 150 MHz, 28 Vdc
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MRF314
30-200MHz,
MRF314
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MRF426
Abstract: equivalent transistor rf "30 mhz"
Text: MRF426 The RF Line NPN Silicon Power Transistor 25W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 05202009 Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • • • • • Product Image Specified 28 V, 30 MHz characteristics —
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MRF426
30MHz,
MRF426
equivalent transistor rf "30 mhz"
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SKY65113-84LF
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SKY65113-84LF: Linear Power Amplifier Driver, 1.0 W 400–2300 MHz Features ● ● ● ● ● Functional Block Diagram Wideband: 400–2300 MHz High linearity: OIP3 > 40 dBm; P1 dB > 30 dBm @ 940 MHz High gain > 20 dB @ 940 MHz Single DC supply: 5 V
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SKY65113-84LF:
450/750/850/900MHz
SKY65113
SKY65113-84LF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SKY65113-84LF: Linear Power Amplifier Driver, 1.0 W 400–2300 MHz Functional Block Diagram Features ● ● ● ● ● Wideband: 400–2300 MHz High linearity: OIP3 > 40 dBm; P1 dB > 30 dBm @ 940 MHz High gain > 20 dB @ 940 MHz Single DC supply: 5 V
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SKY65113-84LF:
450/750/850/900MHz
SKY65113
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220v to 12v capacitive inductive circuit diagram
Abstract: Signal Path designer
Text: OBSOLETE LM2422TE www.ti.com SNOSAL1C – JANUARY 2005 – REVISED NOVEMBER 2006 LM2422TE 220V Monolithic Triple Channel 30 MHz CRT DTV Driver Check for Samples: LM2422TE FEATURES package style 1 • • • • • 2 • 30 MHz bandwidth Current output for IK feedback systems
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LM2422TE
LM2422TE
130VP-P
O-220
1080i
LM2422
220v to 12v capacitive inductive circuit diagram
Signal Path designer
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531 amplifier
Abstract: 14 Ghz microwave transceiver power amplifier s band ghz mhz 10 ghz gain block
Text: Component Selection Guide RF Wireless Communications Products Part Description TQ9114 TQ9121 TQ9122 TQ9132 30 – 500 MHz IF/AGC Amplifier 1.2 – 1.6 GHz Low-Noise Amplifier 500 – 2500 MHz Low-Noise Amplifier 800 – 2500 MHz 50-mW Driver Amplifier Gain dB
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50-mW
DCS-1800
GA1110E-20
GA1210E-20
531 amplifier
14 Ghz microwave transceiver
power amplifier s band ghz mhz
10 ghz gain block
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220v to 12v capacitive inductive circuit diagram
Abstract: 1SS83 LM2422 oscilloscope national semiconductor 1976 12vdc to 60v tc circuit diagram
Text: LM2422 220V Monolithic Triple Channel 30 MHz CRT DTV Driver General Description Features The LM2422 is a triple channel high voltage CRT driver circuit designed for use in DTV applications. The IC contains three high input impedance, wide band amplifiers which
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LM2422
LM2422
130VP-P
O-220
CSP-9-111C2)
CSP-9-111S2)
CSP-9-111S2.
220v to 12v capacitive inductive circuit diagram
1SS83
oscilloscope
national semiconductor 1976
12vdc to 60v tc circuit diagram
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220V ac to 12V dc circuit diagram
Abstract: 1SS83 LM2422 LM2422TE CRT tv troubleshooting guide Signal Path designer
Text: LM2422TE 220V Monolithic Triple Channel 30 MHz CRT DTV Driver General Description Features The LM2422 is a triple channel high voltage CRT driver circuit designed for use in DTV applications. The IC contains three high input impedance, wide band amplifiers which
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LM2422TE
LM2422
130VP-P
O-220
LM2422TE
220V ac to 12V dc circuit diagram
1SS83
CRT tv troubleshooting guide
Signal Path designer
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220V ac to 12V dc circuit diagram
Abstract: 1SS83 LM2422 220v to 12v capacitive inductive circuit diagram
Text: LM2422 220V Monolithic Triple Channel 30 MHz CRT DTV Driver General Description Features The LM2422 is a triple channel high voltage CRT driver circuit designed for use in DTV applications. The IC contains three high input impedance, wide band amplifiers which
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LM2422
LM2422
130VP-P
O-220
CSP-9-111C2)
CSP-9-111S2)
CSP-9-111S2.
220V ac to 12V dc circuit diagram
1SS83
220v to 12v capacitive inductive circuit diagram
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CAMD6254
Abstract: "30 mhz" driver Amplifier
Text: MODEL NUMBER CAMD6254 30 MHz RF Driver Amplifier FEATURES • 27-33 MHz • SMA Connectors • 41 dB Gain • +34 dBm PldB • 3 dB Typical Noise Figure AMP DAICO 22 Industries 310.507.3242 • FAX 310.507.5701 • www.daico.com
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CAMD6254
CAMD6254
"30 mhz" driver Amplifier
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MRF325
Abstract: MRF-325
Text: MOTOROLA Order this document by MRF325/D SEMICONDUCTOR TECHNICAL DATA MRF325 . . . designed primarily for wideband large–signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 30 Watts
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MRF325/D
MRF325
MRF325
MRF325/D*
MRF325/D
MRF-325
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistors . . . designed primarily for wideband large-signal driver and output amplifier stages in the 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts
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MRF314
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VK200-19
Abstract: motorola 2395 JMC5601 NPN/TE 2395 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large-signal driver and output amplifier stages in the 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts
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MRF314
VK200-19
motorola 2395
JMC5601
NPN/TE 2395 motorola
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transistor c 2335
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF392 The RF Line NPN Silicon Push-Pull RF Power TVansistor . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. 125 W, 30 to 500 MHz CONTROLLED "Q”
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MRF392
MRF392
transistor c 2335
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MRF-393
Abstract: MRF393 equivalent transistor rf "30 mhz" AN 240 Motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF393 The RF Line NPN Silicon Push-Pull RF Power Transistor . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. 100 W, 30 to 500 MHz CONTROLLED ‘Q”
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MRF393
MRF393
MRF-393
equivalent transistor rf "30 mhz"
AN 240 Motorola
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MRF426
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP
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MRF426
MRF426
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"class AB Linear" hf
Abstract: allen bradley CC series Mrf426
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F426 The RF Line NPN Silicon RF P o w er Tran sisto r . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP
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MRF426
"class AB Linear" hf
allen bradley CC series
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blx13
Abstract: 2204B
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line N P N Silico n RF Pow er T ran sistor MRF426 . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP
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MRF426
MRF426
blx13
2204B
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